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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

Product Details
Application: Industry
Conductivity Type: N-Type
Purity: SoG-Si
  • 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  • 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  • 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  • 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  • 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  • 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
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Basic Info.

Model NO.
SIC-05
Type
Polycrystalline Silicon
Thicnkss
0.4mm
Suraface
Lapped
Color
Green
Mpd
<2cm-2
Transport Package
Singer Wafer in 100 Grade Cleaning Room
Specification
2inch/3inch/4inch/6inch
Trademark
ANG
Origin
Guangdong, China
HS Code
2903299090
Production Capacity
50, 000PCS Per Month

Product Description

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