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6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer

Product Details
After-sales Service: Yes
Color: Grey
Type: GaN Wafer
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer pictures & photos
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer pictures & photos
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer pictures & photos
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer pictures & photos
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer pictures & photos
6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer pictures & photos
  • 6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
  • 6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
  • 6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
  • 6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
  • 6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
  • 6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
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Product Description

Company Info.

Basic Info.

Model NO.
GaN01
Epi-Layer Thickness
4-5 Um
Surface Morphology
RMS<0.5nm in 5×5 μm²
Barrier
Alxga1-Xn, 0
Transport Package
1PC in 100 Grade Room
Specification
4inch/6inch
Trademark
ANG
Origin
Guangdong, China
HS Code
9503008390
Production Capacity
50, 000PCS Per Month

Product Description

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