6 Inch Algan RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer

• Customization: Available
• After-sales Service: Yes
• Color: Grey
• Model NO.: GaN01
• Epi-Layer Thickness: 4-5 Um
• Surface Morphology: RMS<0.5nm in 5×5 μm²
• Barrier: Alxga1-Xn, 0
• Transport Package: 1PC in 100 Grade Room
• Specification: 4inch/6inch
• Trademark: ANG
• Origin: Guangdong, China
• HS Code: 9503008390
• Production Capacity: 50, 000PCS Per Month

Product Description

6 inch AlGaN RF GaN on Silicon Epitaxial Wafer for Power Electronic GaN Crystal Substrate Gallium Nitride Wafer
 

A Gallium Nitride (GaN) wafer is a substrate material used primarily in the production of semiconductors. GaN is a wide bandgap semiconductor material, meaning it can operate at higher voltages, temperatures, and frequencies than traditional silicon-based semiconductors. Here are some key points about Gallium Nitride (GaN) wafers:

Material Properties:

Gallium Nitride (GaN) has a wide bandgap of about 3.4 eV, compared to silicon's 1.1 eV. This allows GaN devices to function at higher temperatures and voltages, with better efficiency and faster switching speeds.

GaN wafers are used in various applications

Power electronics: GaN devices can handle higher power densities, making them suitable for power converters, inverters, and other power management systems.
Radio Frequency (RF) devices: GaN's high electron mobility makes it ideal for RF amplifiers, especially in telecommunications, radar, and satellite communication systems.
Optoelectronics: GaN is widely used in light-emitting diodes (LEDs), laser diodes, and photodetectors due to its efficiency in
emitting blue and ultraviolet light.

 

Advantages over Silicon

 

GaN-based devices have several advantages over traditional silicon-based devices

 

Higher efficiency: Reduced energy loss and better thermal management.
Higher power density: Smaller and lighter devices for the same power output.
Faster switching speeds: Improved performance in high-frequency applications.

Manufacturing:
GaN wafers are typically grown on substrates such as silicon carbide (SiC) or sapphire. The growth process involves techniques like metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

Challenges:
Despite its advantages, GaN technology faces challenges such as higher production costs and difficulties in material quality and device reliability.

Specification 1

Items	Values/Scope
Substrate	Si
Wafer diameter	4" / 6" / 8"
Epi-layer thickness	4-5 μm
Wafer bow	<30 μm, Typical
Surface Morphology	RMS<0.5nm in 5×5 μm²
Barrier	AlXGa1-XN, 0
Cap layer	In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density	>9E12/cm2 (20nm Al0.25GaN)
>9E12/cm2 (20nm Al0.25GaN)	1800 cm2/Vs (20nm Al0.25GaN)

Specification 2

Items	Values/Scope
Substrate	HR_Si / SiC
Wafer diameter	4''/6'' for SiC, 4"/ 6"/ 8" for HR_Si
Epi-layer thickness	2-3 μm
Wafer bow	<30 μm, Typical
Surface Morphology	RMS<0.5nm in 5×5 μm²
Barrier	AlGaN or AlN or InAlN
AlGaN or AlN or InAlN	In-situ SiN or GaN

 

Feature of GaN Wafer

GaN wafers offer several advantages over traditional semiconductor materials like silicon, making them highly suitable for various advanced electronic applications. Here are some of the key advantages of GaN wafers:

1. Higher Efficiency: GaN devices have lower on-resistance and higher breakdown voltage compared to silicon devices. This leads to reduced energy losses and higher efficiency, particularly in power conversion applications.

2. High Power Density: GaN can handle higher power levels in smaller sizes, allowing for more compact and lighter devices. This is particularly beneficial for applications like power adapters, electric vehicles, and industrial power supplies.
 

3. Faster Switching Speeds: GaN transistors can switch at much higher frequencies than silicon transistors. This results in faster data processing and improved performance in RF (radio frequency) and high-speed digital applications.

4. Thermal Management: GaN has better thermal conductivity and can operate at higher temperatures than silicon. This reduces the need for extensive cooling systems and enhances the reliability and longevity of the devices.

5. Wide Bandgap: GaN's wide bandgap (about 3.4 eV) allows it to function effectively in high-voltage and high-temperature
environments. This makes it suitable for applications such as electric vehicles, solar inverters, and aerospace systems.

6. Improved Efficiency in RF Applications: GaN's high electron mobility and saturation velocity make it ideal for RF and microwave applications, including 5G telecommunications, radar, and satellite communication. GaN RF devices offer higher gain and efficiency compared to their silicon counterparts.

7. Better Performance in High-Frequency Applications: GaN's ability to operate at higher frequencies makes it suitable for advanced communication systems, where it can provide faster and more reliable signal processing.

8. Enhanced Durability and Reliability: GaN devices exhibit greater resistance to radiation and harsh environmental conditions, making them ideal for aerospace, military, and space applications.

9. Reduction in Size and Weight: The high power density and efficiency of GaN devices allow for smaller and lighter electronic systems, which is beneficial for portable and mobile applications.

10. Cost Savings in the Long Run: While GaN devices may have higher initial costs compared to silicon devices, their superior efficiency and performance can lead to significant cost savings over time due to reduced energy consumption and cooling requirements.

Product Picture

1. RF Power Amplifiers: GaN on Sapphire is widely used in the development of RF power amplifiers for wireless communication systems. Its high-frequency operation and power efficiency make it instrumental in enhancing signal strength in communication networks.

2. Power Electronics: In power electronics applications, GaN on Sapphire is employed for the production of high-performance transistors and converters. Its efficiency and reliability contribute to the advancement of power management systems.

3. LEDs and Lighting: GaN on Sapphire is a key technology in the manufacturing of high-brightness LEDs. Its wide bandgap is well-suited for emitting light in the visible spectrum, making it essential for energy-efficient lighting solutions.

4. Aerospace and Defense: The robustness and reliability of GaN on Sapphire make it suitable for aerospace and defense
applications. It is used in radar systems, electronic warfare, and high-frequency communication devices.

5. Automotive Electronics: GaN on Sapphire is increasingly integrated into automotive electronics for power conversion and management. Its ability to operate at high temperatures and handle high power levels aligns with the demanding requirements of automotive applications.


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